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| Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41435 Features * Low Noise Figure: 1.7 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz * High Associated Gain: 14.0 dB Typical at 2.0 GHz 10.0 dB Typical at 4.0 GHz * High Gain-Bandwidth Product: 8.0 GHz Typical fT * Cost Effective Ceramic Microstrip Package finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 at 1 GHz, makes this device easy to use as a low noise amplifier. The AT-41435 bipolar transistor is fabricated using Hewlett-Packard's 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. 35 micro-X Package Description Hewlett-Packard's AT-41435 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41435 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 14 emitter 5965-8925E 4-114 AT-41435 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature[4] Units V V V mA mW C C Absolute Maximum[1] 1.5 20 12 60 500 200 -65 to 200 Thermal Resistance [2,5]: jc = 200C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 5 mW/C for TC > 100C. 4. Storage above +150C may tarnish the leads of this package making it difficult to solder into a circuit. After a device has been soldered into a circuit, it may be safely stored up to 200C. 5. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information. Electrical Specifications, TA = 25C Symbol |S21E|2 P1 dB G1 dB NFO Parameters and Test Conditions Insertion Power Gain; VCE = 8 V, IC = 25 mA Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 25 mA 1 dB Compressed Gain; VCE = 8 V, IC = 25 mA Optimum Noise Figure: VCE = 8 V, IC = 10 mA f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz Units dB dBm dB dB Min. Typ. Max. 11.5 6.0 19.0 18.5 14.0 9.5 1.3 1.7 3.0 18.5 14.0 10.0 8.0 30 150 270 0.2 1.0 2.0 GA Gain @ NFO; VCE = 8 V, IC = 10 mA dB 13.0 GHz -- A A pF fT hFE ICBO IEBO CCB Gain Bandwidth Product: VCE = 8 V, IC = 25 mA Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA Collector Cutoff Current; VCB = 8 V Emitter Cutoff Current; VEB = 1 V Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz 0.2 Note: 1. For this test, the emitter is grounded. 4-115 AT-41435 Typical Performance, TA = 25C 24 21 18 GA 24 16 P1 dB (dBm) GAIN (dB) 15 14 13 12 GA 20 2.0 GHz 4.0 GHz P1dB 10 V 6V 4V GAIN (dB) 15 12 9 6 NF50 16 8 6 12 2.0 GHz 4 G1dB 4.0 GHz NFO 4V 6V 10 V G1 dB (dB) 4 NFO 3 2 1 8 3 0 0.5 1.0 2.0 2 0 3.0 4.0 5.0 4 0 10 20 30 40 0 10 20 30 40 FREQUENCY (GHz) IC (mA) IC (mA) Figure 1. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10mA. Figure 2. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V. Figure 3. Optimum Noise Figure and Associated Gain vs. Collector Current and Collector Voltage. f = 2.0 GHz. 16 40 2.0 GHz 20 GAIN (dB) 14 12 GA 35 30 16 |S21E|2 GAIN (dB) MSG 1.0 GHz GAIN (dB) 10 8 4.0 GHz 25 20 15 10 5 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) MAG |S21E|2 12 2.0 GHz 4 NFO 2.0 GHz NFO (dB) 4.0 GHz 6 8 4.0 GHz 4 2 0 10 20 30 40 0 0 0 10 20 30 40 IC (mA) IC (mA) Figure 4. Optimum Noise Figure and Associated Gain vs. Collector Current and Frequency. VCE = 8 V. Figure 5. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 25 mA. Figure 6. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. 4-116 NFO (dB) NF (dB) AT-41435 Typical Scattering Parameters, Common Emitter, ZO = 50 , TA = 25C, VCE = 8 V, IC = 10 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .80 -32 28.0 24.99 157 0.5 .50 -110 21.8 12.30 108 1.0 .40 -152 16.6 6.73 85 1.5 .38 -176 13.3 4.63 71 2.0 .39 166 11.0 3.54 60 2.5 .41 156 9.3 2.91 53 3.0 .44 145 7.9 2.47 43 3.5 .46 137 6.7 2.15 33 4.0 .46 127 5.6 1.91 23 4.5 .47 116 4.7 1.72 13 5.0 .49 104 4.0 1.58 3 5.5 .52 91 3.3 1.45 -7 6.0 .59 81 2.5 1.34 -17 dB -39.2 -29.6 -26.2 -24.0 -21.9 -20.4 -18.8 -17.5 -16.0 -15.0 -13.9 -13.0 -12.1 S12 Mag. .011 .033 .049 .063 .080 .095 .115 .133 .153 .178 .201 .224 .247 S22 Ang. 82 52 56 59 58 61 61 58 53 50 47 40 36 Mag. .93 .61 .51 .48 .46 .44 .43 .43 .45 .46 .48 .47 .43 Ang. -12 -28 -30 -32 -37 -40 -48 -58 -68 -75 -82 -89 -101 AT-41435 Typical Scattering Parameters, Common Emitter, ZO = 50 , TA = 25C, VCE = 8 V, IC = 25 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 .63 .39 .36 .36 .38 .40 .43 .45 .46 .46 .47 .51 .58 -50 -137 -171 171 156 149 140 132 122 112 101 89 79 31.8 22.9 17.2 13.9 11.5 9.8 8.3 7.2 6.1 5.2 4.4 3.7 3.0 39.08 13.97 7.28 4.94 3.76 3.08 2.61 2.28 2.02 1.82 1.66 1.54 1.41 146 99 80 68 58 52 43 33 23 14 4 -5 -15 dB -40.0 -31.4 -27.1 -23.5 -21.6 -19.6 -18.3 -16.8 -15.6 -14.6 -13.7 -12.6 -11.8 S12 Mag. .010 .027 .044 .067 .083 .105 .122 .144 .165 .185 .207 .233 .257 S22 Ang. 83 60 67 66 63 63 64 59 55 50 45 39 33 Mag. .84 .50 .45 .43 .41 .39 .38 .39 .40 .42 .43 .42 .37 Ang. -18 -26 -26 -30 -34 -38 -47 -57 -67 -75 -81 -89 -101 A model for this device is available in the DEVICE MODELS section. AT-41435 Noise Parameters: VCE = 8 V, IC = 10 mA Freq. GHz 0.1 0.5 1.0 2.0 4.0 NFO dB 1.2 1.2 1.3 1.7 3.0 opt Mag .12 .10 .05 .30 .54 Ang 3 14 28 -154 -118 RN/50 0.17 0.17 0.17 0.16 0.35 4-117 35 micro-X Package Dimensions .085 2.15 4 EMITTER .083 DIA. 2.11 1 016 BASE COLLECTOR 3 .020 .508 2 EMITTER Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 .057 .010 1.45 .25 .100 2.54 .022 .56 .455 .030 11.54 .75 .006 .002 .15 .05 4-118 |
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